?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b HGTP3N60C3D, hgt1s3n60c3ds 6a, 600v, ufs series n-channel igbt with anti-parallel hyperfast diodes the HGTP3N60C3D, and hgt1s3n60c3ds are mos gated high voltage switching devices comb ining the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt used is the development type ta49113. the diode used in anti-parallel with the igbt is the development type ta49055. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. formerly developmental type ta49119. symbol features ? 6a, 600v at t c = 25 o c 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . 130ns at t j = 150 o c short circuit rating low conduction loss hyperfast anti-parallel diode packaging jedec to-220ab jedec to-263ab ordering information part number package brand HGTP3N60C3D to-220ab g3n60c3d hgt1s3n60c3ds to-263ab g3n60c3d note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab variant in tape and reel, i.e., hgt1s3n60c3ds9a. c e g gate collector (flange) emitter collector collector (flange) gate emitter fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001
?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified HGTP3N60C3D, hgt1s3n60c3ds units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 6a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 3a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 24 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges ............................................ ...................... ......................................... .......................................... . . ....................... .......... ........................... ..................... caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. v ce(pk) = 360v, t j = 125 o c, r g = 82 ?. . . . . . . . . ? . . . . . . . . ? . . . . . . . . . .
?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b typical performance curves figure 1. transfer characteristics fig ure 2. saturation characteristics figure 3. collector to emitter on-state voltage figure 4. collector to emitter on-state voltage figure 5. maximum dc collector current vs case temperature figure 6. short circuit withstand time i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 681012 0 2 4 8 10 12 14 14 6 16 pulse duration = 250 . . . . . . . . . ?
?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b figure 7. turn-on delay time vs collector to emitter current figure 8. turn-off delay time vs collector to emitter current figure 9. turn-on rise time vs collector to emitter current figure 10. turn-off fall time vs collector to emitter current figure 11. turn-on energy loss vs collector to emitter current figure 12. turn-off energy loss vs collector to emitter current typical performance curves (continued) t d(on)i , turn-on delay time (ns) 3 1234 i ce , collector to emitter current (a) 20 56 10 v ge = 15v 78 t j = 150 o c, r g = 82 ? ? ? ? . . . . ? . . . . . . . ? . .
?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b figure 13. operating frequency vs collector to emitter current figure 14. minimum switching safe operating area figure 15. capacitance vs collector to emitter voltage figure 16. gate charge waveforms figure 17. igbt normalized transient thermal impedance, junction to case typical performance curves (continued) i ce , collector to emitter current (a) f max , operating frequency (khz) 1246 100 200 10 f max2 = (p d - p c )/(e on + e off ) p d = allowable dissipation p c = conduction dissipation f max1 = 0.05/(t d(off)i + t d(on)i ) (duty factor = 50%) r . ? ? . ? . . . . . .
?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b figure 18. diode forward current vs forward voltage drop figure 19. recovery times vs forward current typical performance curves (continued) 0.5 1.0 1.5 2.5 3.0 i ec , forward current (a) v ec , forward voltage (v) 02.0 3 0 6 9 12 15 25 o c 150 o c 3.5 100 o c 30 25 20 15 0 t r , recovery times (ns) i ec , forward current (a) 14 t rr t c = 25 o c, di ec /dt = 200a/ . . . ?
?2001 fairchild semiconductor corporation HGTP3N60C3D, hgt1s3n60c3ds rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precauti ons are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as eccosorbd ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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